Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRF640SPBF

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Subtotal (1 unit)*

SGD3.37

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SGD3.67

(inc. GST)

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Units
Per unit
1 - 9SGD3.37
10 - 49SGD3.30
50 - 99SGD3.21
100 - 249SGD3.12
250 +SGD3.03

*price indicative

Packaging Options:
RS Stock No.:
541-2464
Mfr. Part No.:
IRF640SPBF
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

70 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.65mm

Length

10.67mm

Minimum Operating Temperature

-55 °C

Height

4.83mm

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor


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MOSFET Transistors, Vishay Semiconductor