N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 STMicroelectronics STP20NM60FD
- RS Stock No.:
- 486-2228P
- Mfr. Part No.:
- STP20NM60FD
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (10 tubes of 1 unit)**
SGD87.70
(exc. GST)
SGD95.60
(inc. GST)
Stock check temporarily unavailable - call for stock availability
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit |
|---|---|
| 10 - 49 | SGD8.51 |
| 50 - 99 | SGD8.26 |
| 100 - 249 | SGD8.02 |
| 250 + | SGD7.79 |
**price indicative
- RS Stock No.:
- 486-2228P
- Mfr. Part No.:
- STP20NM60FD
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Series | FDmesh | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 290 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 192 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.6mm | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -65 °C | |
| Height | 9.15mm | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Series FDmesh | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 290 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 192 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.6mm | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -65 °C | ||
Height 9.15mm | ||