Vishay SIS Type N-Channel MOSFET, 178.3 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3

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Subtotal (1 pack of 10 units)*

SGD15.58

(exc. GST)

SGD16.98

(inc. GST)

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Units
Per unit
Per Pack*
10 - 90SGD1.558SGD15.58
100 - 240SGD1.223SGD12.23
250 - 490SGD1.119SGD11.19
500 - 990SGD1.028SGD10.28
1000 +SGD0.878SGD8.78

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Packaging Options:
RS Stock No.:
281-6040
Mfr. Part No.:
SISS66DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

178.3A

Maximum Drain Source Voltage Vds

30V

Series

SIS

Package Type

PowerPAK 1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00138Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.8W

Typical Gate Charge Qg @ Vgs

24.7nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

3.3 mm

Length

3.3mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET with schottky diode has applications in synchronous rectification, synchronous buck converter, and DC/DC conversions.

TrenchFET Generation IV power MOSFET

SKYFET with monolithic schottky diode

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