Vishay SIRS Type N-Channel MOSFET, 334 A, 60 V Enhancement, 8-Pin SO-8 SIRS4600DP-T1-RE3

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1 - 49SGD6.15
50 - 99SGD4.61
100 - 249SGD4.09
250 - 999SGD4.02
1000 +SGD3.95

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Packaging Options:
RS Stock No.:
279-9969
Mfr. Part No.:
SIRS4600DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

334A

Maximum Drain Source Voltage Vds

60V

Series

SIRS

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00115Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

162nC

Maximum Power Dissipation Pd

240W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Reduces switching related power loss

Fully lead (Pb)-free device

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