Vishay SIRS Type N-Channel MOSFET, 334 A, 60 V Enhancement, 8-Pin SO-8 SIRS4600DP-T1-RE3

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1 - 49SGD6.15
50 - 99SGD4.61
100 - 249SGD4.09
250 - 999SGD4.02
1000 +SGD3.95

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Packaging Options:
RS Stock No.:
279-9969
Mfr. Part No.:
SIRS4600DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

334A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

SIRS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00115Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

162nC

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Reduces switching related power loss

Fully lead (Pb)-free device

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