Vishay SiR Type P-Channel MOSFET, 37.1 A, 60 V Enhancement, 8-Pin SO-8 SIR5623DP-T1-RE3
- RS Stock No.:
- 279-9953
- Mfr. Part No.:
- SIR5623DP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 4 units)*
SGD11.172
(exc. GST)
SGD12.176
(inc. GST)
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In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 56 | SGD2.793 | SGD11.17 |
| 60 - 96 | SGD2.643 | SGD10.57 |
| 100 - 236 | SGD2.353 | SGD9.41 |
| 240 - 996 | SGD2.31 | SGD9.24 |
| 1000 + | SGD2.268 | SGD9.07 |
*price indicative
- RS Stock No.:
- 279-9953
- Mfr. Part No.:
- SIR5623DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 37.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.024Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 59.5W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 37.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.024Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 59.5W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
New generation power MOSFET
100 percent Rg and UIS tested
Ultra low RDS x Qg FOM product
Fully lead (Pb)-free device
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