Vishay SiR Type N-Channel MOSFET, 47.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3
- RS Stock No.:
- 279-9943
- Mfr. Part No.:
- SIR5110DP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
SGD3,753.00
(exc. GST)
SGD4,092.00
(inc. GST)
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In Stock
- Plus 6,000 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | SGD1.251 | SGD3,753.00 |
*price indicative
- RS Stock No.:
- 279-9943
- Mfr. Part No.:
- SIR5110DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 47.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiR | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0125Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 59.5W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 47.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiR | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0125Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 59.5W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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