Vishay SIA Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 7-Pin SC-70-6L SIA112LDJ-T1-GE3

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Subtotal (1 pack of 10 units)*

SGD9.17

(exc. GST)

SGD10.00

(inc. GST)

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Being discontinued
  • Final 6,000 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
10 - 40SGD0.917SGD9.17
50 - 90SGD0.686SGD6.86
100 - 240SGD0.609SGD6.09
250 - 990SGD0.596SGD5.96
1000 +SGD0.582SGD5.82

*price indicative

Packaging Options:
RS Stock No.:
279-9900
Mfr. Part No.:
SIA112LDJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.8A

Maximum Drain Source Voltage Vds

100V

Package Type

SC-70-6L

Series

SIA

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.119Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

15.6W

Typical Gate Charge Qg @ Vgs

5.4nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

2.05mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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