STMicroelectronics G-HEMT MOSFET, 15 A, 750 V Enhancement, 4-Pin Reel
- RS Stock No.:
- 265-1035P
- Mfr. Part No.:
- SGT120R65AL
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
SGD354.25
(exc. GST)
SGD386.15
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 50 - 98 | SGD7.085 |
| 100 - 248 | SGD6.945 |
| 250 - 998 | SGD6.805 |
| 1000 + | SGD6.665 |
*price indicative
- RS Stock No.:
- 265-1035P
- Mfr. Part No.:
- SGT120R65AL
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | G-HEMT | |
| Package Type | Reel | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series G-HEMT | ||
Package Type Reel | ||
Mount Type Surface | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics e-mode PowerGaN transistor is combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge