Vishay SQJQ184ER Type N-Channel MOSFET, 430 A, 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184ER-T1_GE3
- RS Stock No.:
- 252-0309
- Mfr. Part No.:
- SQJQ184ER-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD11.56
(exc. GST)
SGD12.60
(inc. GST)
Add 26 units to get free delivery
Limited stock
- Plus 1,992 left, shipping from 16 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | SGD5.78 | SGD11.56 |
| 50 - 98 | SGD4.91 | SGD9.82 |
| 100 - 248 | SGD4.245 | SGD8.49 |
| 250 - 998 | SGD4.165 | SGD8.33 |
| 1000 + | SGD3.09 | SGD6.18 |
*price indicative
- RS Stock No.:
- 252-0309
- Mfr. Part No.:
- SQJQ184ER-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 430A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SQJQ184ER | |
| Package Type | PowerPAK (8x8LR) | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0014mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 214W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9 mm | |
| Height | 1.9mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 430A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SQJQ184ER | ||
Package Type PowerPAK (8x8LR) | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0014mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 214W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.9 mm | ||
Height 1.9mm | ||
Standards/Approvals AEC-Q101 | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.9 mm height
Related links
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