Specifications

Technical data sheets

Legislation and Compliance

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	1200V
	Series	NTH
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Power Dissipation Pd	117W
	Typical Gate Charge Qg @ Vgs	74nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 1200V
	Series NTH
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Power Dissipation Pd 117W
	Typical Gate Charge Qg @ Vgs 74nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - NTH4L060N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L

The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 176 W power dissipation, TO247-4L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.

Ultra low gate charge 74 nC

Low capacitance 133 pF

100 percent avalanche tested

Temperature 175°C

RDS(on) 44 mohm

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L060N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L

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