Nexperia PSMN013 2 Type N-Channel MOSFET, 42 A, 40 V, 8-Pin LFPAK56D
- RS Stock No.:
- 243-4871P
- Mfr. Part No.:
- PSMN013-40VLDX
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
SGD55.65
(exc. GST)
SGD60.65
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 1,480 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 50 - 90 | SGD1.113 |
| 100 - 240 | SGD0.879 |
| 250 - 490 | SGD0.861 |
| 500 + | SGD0.727 |
*price indicative
- RS Stock No.:
- 243-4871P
- Mfr. Part No.:
- PSMN013-40VLDX
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK56D | |
| Series | PSMN013 | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.3nC | |
| Maximum Gate Source Voltage Vgs | -20 V | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK56D | ||
Series PSMN013 | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.3nC | ||
Maximum Gate Source Voltage Vgs -20 V | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Nexperia Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Next power S3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications.
Reduced PCB layout complexity
Module shrinkage through reduced component count
Lower parasitic inductance to support higher efficiency
Low power losses, high power density
Superior avalanche performance
Repetitive avalanche rated
LFPAK copper clip packaging provides high robustness and reliability
Handheld power tools, portable appliance and space constrained applications
Brushless or brushed DC motor drive
DC-to-DC systems
LED lighting