Nexperia 2 Type N-Channel MOSFET, 98 A, 40 V, 8-Pin LFPAK56D BUK7V4R2-40HX
- RS Stock No.:
- 240-1814
- Mfr. Part No.:
- BUK7V4R2-40HX
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD25.17
(exc. GST)
SGD27.435
(inc. GST)
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In Stock
- Plus 1,355 unit(s) shipping from 19 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD5.034 | SGD25.17 |
| 50 - 95 | SGD4.538 | SGD22.69 |
| 100 - 245 | SGD3.652 | SGD18.26 |
| 250 - 495 | SGD3.576 | SGD17.88 |
| 500 + | SGD2.998 | SGD14.99 |
*price indicative
- RS Stock No.:
- 240-1814
- Mfr. Part No.:
- BUK7V4R2-40HX
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 98A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK56D | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Maximum Power Dissipation Pd | 85W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 98A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK56D | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Maximum Power Dissipation Pd 85W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Nexperia dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 Trench MOS technology. This product has been designed and qualified to AEC-Q101.
LFPAK56D package with half-bridge configuration enables
Reduced PCB layout complexity
PCB shrinkage through reduced component footprint for 3-phase motor drive
Improved system level Rth(j-amb) due to optimized package design
Lower parasitic inductance to support higher efficiency
Footprint compatibility with LFPAK56D Dual package
Advanced AEC-Q101 grade Trench 9 silicon technology
Low power losses, high power density
Superior avalanche performance
Repetitive avalanche rated
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