onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263 NTBG045N065SC1
- RS Stock No.:
- 229-6444
- Mfr. Part No.:
- NTBG045N065SC1
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
SGD16.25
(exc. GST)
SGD17.71
(inc. GST)
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In Stock
- Plus 728 unit(s) shipping from 29 December 2025
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Units | Per unit |
|---|---|
| 1 - 9 | SGD16.25 |
| 10 - 99 | SGD15.76 |
| 100 - 249 | SGD15.27 |
| 250 - 499 | SGD14.94 |
| 500 + | SGD14.61 |
*price indicative
- RS Stock No.:
- 229-6444
- Mfr. Part No.:
- NTBG045N065SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Power Dissipation Pd | 242W | |
| Forward Voltage Vf | 4.8V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Width | 4.7 mm | |
| Height | 9.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Power Dissipation Pd 242W | ||
Forward Voltage Vf 4.8V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Width 4.7 mm | ||
Height 9.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Related links
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