Vishay TrenchFET Type N-Channel MOSFET, 150 A, 200 V Enhancement, 3-Pin TO-263 SUM90100E-GE3
- RS Stock No.:
- 228-2987
- Mfr. Part No.:
- SUM90100E-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD11.82
(exc. GST)
SGD12.88
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 618 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD5.91 | SGD11.82 |
| 10 - 48 | SGD5.335 | SGD10.67 |
| 50 - 98 | SGD5.01 | SGD10.02 |
| 100 - 248 | SGD4.38 | SGD8.76 |
| 250 + | SGD4.30 | SGD8.60 |
*price indicative
- RS Stock No.:
- 228-2987
- Mfr. Part No.:
- SUM90100E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 72.8nC | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 72.8nC | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 200-V (D-S) MOSFET.
100 % Rg and UIS tested
Related links
- Vishay TrenchFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Vishay TrenchFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Vishay TrenchFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 SUP90100E-GE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263 SUM70030M-GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263 SUM40014M-GE3
- Vishay TrenchFET Type N-Channel Power MOSFET 20 V Enhancement, 3-Pin SOT-23