Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8 SiR681DP-T1-RE3

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Subtotal (1 pack of 5 units)*

SGD20.90

(exc. GST)

SGD22.80

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45SGD4.18SGD20.90
50 - 95SGD3.764SGD18.82
100 - 245SGD3.388SGD16.94
250 - 995SGD3.048SGD15.24
1000 +SGD2.742SGD13.71

*price indicative

Packaging Options:
RS Stock No.:
228-2910
Mfr. Part No.:
SiR681DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

71.9A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

69.4nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET P-channel is 80 V MOSFET.

100 % Rg and UIS tested

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