Vishay TrenchFET Type P-Channel MOSFET, 12.5 A, 20 V Enhancement, 8-Pin TSSOP Si6423ADQ-T1-GE3
- RS Stock No.:
- 228-2823
- Mfr. Part No.:
- Si6423ADQ-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD10.29
(exc. GST)
SGD11.22
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 5,530 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.029 | SGD10.29 |
| 50 - 90 | SGD0.998 | SGD9.98 |
| 100 - 240 | SGD0.939 | SGD9.39 |
| 250 - 990 | SGD0.854 | SGD8.54 |
| 1000 + | SGD0.751 | SGD7.51 |
*price indicative
- RS Stock No.:
- 228-2823
- Mfr. Part No.:
- Si6423ADQ-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | TSSOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Maximum Power Dissipation Pd | 2.2W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type TSSOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Maximum Power Dissipation Pd 2.2W | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET P-Channel power MOSFET is use for load switch, battery switch and power management.
100 % Rg and UIS tested
Related links
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