onsemi Isolated FAM Type N-Channel MOSFET, 38 A, 650 V, 12-Pin APMCD-A16
- RS Stock No.:
- 221-6579
- Mfr. Part No.:
- FAM65CR51ADZ2
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 72 units)*
SGD2,919.024
(exc. GST)
SGD3,181.752
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 72 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 72 - 72 | SGD40.542 | SGD2,919.02 |
| 144 - 144 | SGD39.837 | SGD2,868.26 |
| 216 - 360 | SGD38.798 | SGD2,793.46 |
| 432 - 792 | SGD36.774 | SGD2,647.73 |
| 864 + | SGD32.936 | SGD2,371.39 |
*price indicative
- RS Stock No.:
- 221-6579
- Mfr. Part No.:
- FAM65CR51ADZ2
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | FAM | |
| Package Type | APMCD-A16 | |
| Mount Type | Through Hole | |
| Pin Count | 12 | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 2.4V | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 166W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 125°C | |
| Height | 4.7mm | |
| Standards/Approvals | RoHS, UL94V-0 | |
| Length | 40.3mm | |
| Width | 22.1 mm | |
| Automotive Standard | AEC-Q101, AQG 324 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series FAM | ||
Package Type APMCD-A16 | ||
Mount Type Through Hole | ||
Pin Count 12 | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 2.4V | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 166W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 125°C | ||
Height 4.7mm | ||
Standards/Approvals RoHS, UL94V-0 | ||
Length 40.3mm | ||
Width 22.1 mm | ||
Automotive Standard AEC-Q101, AQG 324 | ||
The ON Semiconductor FAM65CR51ADZ1 is a power integrated MOSFET module with boost converter stage for multi-phase and semi-bridgeless power factor correction (PFC) with Diode. It enable design of small, efficient and reliable system for reduced vehicle fuel consumption and CO2 emission.
Compact design for low total module resistance
Module serialization for full traceability
Improved performance with SiC diode
Related links
- onsemi Isolated FAM Type N-Channel MOSFET 650 V, 12-Pin APMCD-A16 FAM65CR51ADZ2
- onsemi Dual N NTTF 1 Type N-Channel MOSFET 60 V Enhancement, 12-Pin WQFN
- onsemi Dual N NTTF 1 Type N-Channel MOSFET 60 V Enhancement, 12-Pin WQFN NTTFD9D0N06HLTWG
- onsemi Isolated 2 Type P 7 A 8-Pin ECH
- onsemi Isolated Type N-Channel SiC Power Module 1200 V, 36-Pin F2
- onsemi Isolated 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
