onsemi SUPERFET III Type N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-220 NTPF360N80S3Z
- RS Stock No.:
- 205-2506
- Mfr. Part No.:
- NTPF360N80S3Z
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD24.30
(exc. GST)
SGD26.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 910 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD4.86 | SGD24.30 |
| 10 - 45 | SGD4.16 | SGD20.80 |
| 50 - 95 | SGD3.226 | SGD16.13 |
| 100 - 495 | SGD3.136 | SGD15.68 |
| 500 + | SGD2.748 | SGD13.74 |
*price indicative
- RS Stock No.:
- 205-2506
- Mfr. Part No.:
- NTPF360N80S3Z
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SUPERFET III | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 31W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25.3nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.5mm | |
| Width | 9.96 mm | |
| Standards/Approvals | RoHS | |
| Length | 28.45mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SUPERFET III | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 31W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25.3nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.5mm | ||
Width 9.96 mm | ||
Standards/Approvals RoHS | ||
Length 28.45mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III series N-channel 800V MOSFET is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal zener diode significantly improves ESD capability. This new family enables make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.
Continuous Drain Current rating is 13A
Drain to source on resistance rating is 360mohm
Ultra low gate charge
Low stored energy in output capacitance
100% avalanche tested
Package type is TO-220F
Related links
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-252
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-220 NTP360N80S3Z
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-252 NTD360N80S3Z
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263 FCB125N65S3
- onsemi SUPERFET III Type N-Channel MOSFET 800 V N, 3-Pin TO-252
- onsemi SUPERFET III Type N-Channel MOSFET 800 V N, 3-Pin TO-252 NTD600N80S3Z