STMicroelectronics STB Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263 STB18N60M6
- RS Stock No.:
- 192-4936
- Mfr. Part No.:
- STB18N60M6
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 5 units)*
SGD19.38
(exc. GST)
SGD21.125
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD3.876 | SGD19.38 |
| 50 - 95 | SGD3.482 | SGD17.41 |
| 100 - 245 | SGD2.844 | SGD14.22 |
| 250 - 495 | SGD2.604 | SGD13.02 |
| 500 + | SGD2.39 | SGD11.95 |
*price indicative
- RS Stock No.:
- 192-4936
- Mfr. Part No.:
- STB18N60M6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | STB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16.8nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.37mm | |
| Width | 9.35 mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series STB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16.8nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.37mm | ||
Width 9.35 mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
Related links
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