STMicroelectronics Single 1 Type N, Type N-Channel, 25 A, 650 V Enhancement, 3-Pin TO-220 STP26N65DM2
- RS Stock No.:
- 192-4662
- Mfr. Part No.:
- STP26N65DM2
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD242.70
(exc. GST)
SGD264.55
(inc. GST)
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD4.854 | SGD242.70 |
| 100 - 200 | SGD4.708 | SGD235.40 |
| 250 - 450 | SGD4.52 | SGD226.00 |
| 500 - 950 | SGD4.294 | SGD214.70 |
| 1000 + | SGD4.036 | SGD201.80 |
*price indicative
- RS Stock No.:
- 192-4662
- Mfr. Part No.:
- STP26N65DM2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Mount Type | Surface, Through Hole, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 160W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35.5nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Width | 4.6 mm | |
| Standards/Approvals | FCC Part 68, RoHS, TIA-1096-A | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Mount Type Surface, Through Hole, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 160W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35.5nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 15.75mm | ||
Width 4.6 mm | ||
Standards/Approvals FCC Part 68, RoHS, TIA-1096-A | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and Ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
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