Vishay 1 Type N-Channel Power MOSFET, 30 A, 60 V, 3-Pin TO-220AB IRLZ34PBF
- RS Stock No.:
- 180-8365
- Mfr. Part No.:
- IRLZ34PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 180-8365
- Mfr. Part No.:
- IRLZ34PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.05Ω | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 88W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 14.4mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Height | 6.48mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.05Ω | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 88W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 14.4mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Height 6.48mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-220AB-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 10V. It has a drain-source resistance of 50mohm at a gate-source voltage of 5V. The MOSFET has a maximum power dissipation of 88W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dynamic dV/dt rating
• Ease of paralleling
• Fast switching
• Lead (Pb) free component
• Logic-level gate drive
• Operating temperature ranges between -55°C and 175°C
• Simple drive requirements
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
Related links
- Vishay 1 Type N-Channel Power MOSFET 60 V, 3-Pin TO-220AB
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFZ34PBF
- Vishay Single 1 Type N-Channel Power MOSFET 500 V TO-220AB
- Vishay Single 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB
- Vishay Single 1 Type N-Channel Power MOSFET 50 V, 3-Pin TO-220AB
- Vishay Single EF 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB
- Vishay Single EF 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB SIHP21N60EF-GE3
