Vishay TrenchFET Type P-Channel MOSFET, 16 A, 12 V Enhancement, 6-Pin MICRO FOOT SI8483DB-T2-E1
- RS Stock No.:
- 180-7932
- Mfr. Part No.:
- SI8483DB-T2-E1
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD14.625
(exc. GST)
SGD15.95
(inc. GST)
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- Shipping from 18 May 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.585 | SGD14.63 |
| 50 - 75 | SGD0.555 | SGD13.88 |
| 100 - 475 | SGD0.528 | SGD13.20 |
| 500 - 975 | SGD0.501 | SGD12.53 |
| 1000 + | SGD0.476 | SGD11.90 |
*price indicative
- RS Stock No.:
- 180-7932
- Mfr. Part No.:
- SI8483DB-T2-E1
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | MICRO FOOT | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 13W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.5mm | |
| Height | 0.59mm | |
| Width | 1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type MICRO FOOT | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 13W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 1.5mm | ||
Height 0.59mm | ||
Width 1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay Siliconix Si8483DB series TrenchFET dual N channel power MOSFET has drain to source voltage of 12 V. It is maximum power dissipation of 13 W and mainly used in load switch in portable devices.
Low voltage drop
Low power consumption
Increased battery life
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