N-Channel MOSFET, 12 A, 650 V, 4-Pin Power88 onsemi FCMT250N65S3
- RS Stock No.:
- 178-4657
- Mfr. Part No.:
- FCMT250N65S3
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)**
SGD46.79
(exc. GST)
SGD51.00
(inc. GST)
5280 In stock for delivery within 4 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Pack** |
|---|---|---|
| 10 - 90 | SGD4.679 | SGD46.79 |
| 100 - 490 | SGD4.446 | SGD44.46 |
| 500 - 990 | SGD4.223 | SGD42.23 |
| 1000 + | SGD4.011 | SGD40.11 |
**price indicative
- RS Stock No.:
- 178-4657
- Mfr. Part No.:
- FCMT250N65S3
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | Power88 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 250 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 90 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 8mm | |
| Width | 8mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type Power88 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 250 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 90 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Typical Gate Charge @ Vgs 24 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 8mm | ||
Width 8mm | ||
Number of Elements per Chip 1 | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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