onsemi NVMFS5C426NL Type N-Channel MOSFET, 237 A, 40 V Enhancement, 5-Pin DFN NVMFS5C426NLT1G
- RS Stock No.:
- 178-4606
- Mfr. Part No.:
- NVMFS5C426NLT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD40.66
(exc. GST)
SGD44.32
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 1,380 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD4.066 | SGD40.66 |
| 100 - 240 | SGD3.862 | SGD38.62 |
| 250 - 490 | SGD3.667 | SGD36.67 |
| 500 - 990 | SGD3.485 | SGD34.85 |
| 1000 + | SGD3.311 | SGD33.11 |
*price indicative
- RS Stock No.:
- 178-4606
- Mfr. Part No.:
- NVMFS5C426NLT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 237A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMFS5C426NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 128W | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.1mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 237A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMFS5C426NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 128W | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 5.1mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Height 1.05mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5 x 6 mm)
Low RDS(on)
Low Qg and Capacitance
Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver losses
Enhanced Optical Inspection
Applications
Reverse Battery Protection
Power Switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching Power Supplies
End Products
Solenoid Driver - ABS, Fuel Injection
Motor Control - EPS, Wipers, Fans, Seats, etc.
Load Switch - ECU, Chassis, body
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