onsemi Dual NVMFD5C466NL 2 Type N-Channel Power MOSFET, 52 A, 40 V Enhancement, 8-Pin DFN NVMFD5C466NLT1G
- RS Stock No.:
- 172-3351
- Mfr. Part No.:
- NVMFD5C466NLT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD55.05
(exc. GST)
SGD60.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD2.202 | SGD55.05 |
| 50 - 75 | SGD2.018 | SGD50.45 |
| 100 - 225 | SGD1.863 | SGD46.58 |
| 250 - 475 | SGD1.73 | SGD43.25 |
| 500 + | SGD1.661 | SGD41.53 |
*price indicative
- RS Stock No.:
- 172-3351
- Mfr. Part No.:
- NVMFD5C466NLT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Series | NVMFD5C466NL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 40W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.1 mm | |
| Height | 1.05mm | |
| Standards/Approvals | PPAP capable, AEC-Q101, RoHS | |
| Length | 6.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Series NVMFD5C466NL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 40W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Width 5.1 mm | ||
Height 1.05mm | ||
Standards/Approvals PPAP capable, AEC-Q101, RoHS | ||
Length 6.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
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