N-Channel MOSFET, 5.4 A, 20 V, 3-Pin SOT-23 Nexperia PMV30UN2R
- RS Stock No.:
- 170-5432
- Mfr. Part No.:
- PMV30UN2R
- Manufacturer:
- Nexperia
Temporarily out of stock - back order for despatch 17/10/2024, delivery within 4 working days from despatch date
Added
Price Each (In a Pack of 50)
SGD0.456
(exc. GST)
SGD0.497
(inc. GST)
| Units | Per unit | Per Pack* |
| 50 - 200 | SGD0.456 | SGD22.80 |
| 250 - 450 | SGD0.446 | SGD22.30 |
| 500 - 1200 | SGD0.433 | SGD21.65 |
| 1250 - 2450 | SGD0.42 | SGD21.00 |
| 2500 + | SGD0.408 | SGD20.40 |
| *price indicative | ||
- RS Stock No.:
- 170-5432
- Mfr. Part No.:
- PMV30UN2R
- Manufacturer:
- Nexperia
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1000 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1000 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.4 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | TO-236 |
| Series | PMV30UN2 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 100 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.9V |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 12 V |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 6.2 nC @ 4.5 V |
| Length | 3mm |
| Width | 1.4mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |