N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3

RS Stock No.:: 168-4696
Mfr. Part No.:: IXFB82N60Q3
Manufacturer:: IXYS

N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3

This image is representative of the product range

Price Each (In a Tube of 25)

SGD41.307

(exc. GST)

SGD45.025

(inc. GST)

Temporarily out of stock - back order for despatch 01/08/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
25 +	SGD41.307	SGD1,032.675

**price indicative

RS Stock No.:: 168-4696
Mfr. Part No.:: IXFB82N60Q3
Manufacturer:: IXYS

IXFB82N60Q3, HiperFET Power MOSFET Q3-Class, N-Channel Enhancement Mode Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	82 A
Maximum Drain Source Voltage	600 V
Package Type	PLUS264
Series	HiperFET, Q3-Class
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	75 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	1.56 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Length	20.29mm
Typical Gate Charge @ Vgs	275 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	5.31mm
Height	26.59mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

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