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    N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3

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    Subtotal (1 tube of 25 units)**

    SGD1,014.57

    (exc. GST)

    SGD1,105.88

    (inc. GST)

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    Temporarily out of stock - back order for despatch 13/12/2025, delivery within 4 working days from despatch date*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per unit
    Per Tube**
    25 +SGD40.583SGD1,014.575

    **price indicative

    RS Stock No.:
    168-4696
    Mfr. Part No.:
    IXFB82N60Q3
    Manufacturer:
    IXYS
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    Manufacturer

    IXYS

    Channel Type

    N

    Maximum Continuous Drain Current

    82 A

    Maximum Drain Source Voltage

    600 V

    Package Type

    PLUS264

    Series

    HiperFET, Q3-Class

    Mounting Type

    Through Hole

    Pin Count

    3

    Maximum Drain Source Resistance

    75 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    6.5V

    Maximum Power Dissipation

    1.56 kW

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -30 V, +30 V

    Number of Elements per Chip

    1

    Transistor Material

    Si

    Length

    20.29mm

    Typical Gate Charge @ Vgs

    275 nC @ 10 V

    Maximum Operating Temperature

    +150 °C

    Width

    5.31mm

    Height

    26.59mm

    Minimum Operating Temperature

    -55 °C

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