IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

SGD754.45

(exc. GST)

SGD822.35

(inc. GST)

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  • 70 unit(s) ready to ship from another location
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Units
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Per Tube*
10 +SGD75.445SGD754.45

*price indicative

RS Stock No.:
168-4578
Mfr. Part No.:
IXFN360N15T2
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

310A

Maximum Drain Source Voltage Vds

150V

Series

GigaMOS TrenchT2 HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

715nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.07kW

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

38.23mm

Height

9.6mm

Width

25.07 mm

Automotive Standard

No

COO (Country of Origin):
PH

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