Vishay SUP57N20-33 Type N-Channel MOSFET, 57 A, 200 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 165-2816
- Mfr. Part No.:
- SUP57N20-33-E3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD181.45
(exc. GST)
SGD197.80
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 200 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD3.629 | SGD181.45 |
| 150 - 200 | SGD3.493 | SGD174.65 |
| 250 + | SGD3.275 | SGD163.75 |
*price indicative
- RS Stock No.:
- 165-2816
- Mfr. Part No.:
- SUP57N20-33-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | SUP57N20-33 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.75W | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series SUP57N20-33 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.75W | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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