SiC N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247N ROHM SCT3120ALGC11
- RS Stock No.:
- 150-1488
- Mfr. Part No.:
- SCT3120ALGC11
- Manufacturer:
- ROHM
4 In stock for delivery within 4 working days
Price Each
SGD12.05
(exc. GST)
SGD13.13
(inc. GST)
Units | Per unit |
|---|---|
| 1 - 1 | SGD12.05 |
| 2 - 4 | SGD11.78 |
| 5 - 9 | SGD11.43 |
| 10 - 49 | SGD11.08 |
| 50 + | SGD10.75 |
- RS Stock No.:
- 150-1488
- Mfr. Part No.:
- SCT3120ALGC11
- Manufacturer:
- ROHM
Technical data sheets
Legislation and Compliance
Product Details
Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, RoHS compliant
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 21 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247N |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 158.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.6V |
| Minimum Gate Threshold Voltage | 2.7V |
| Maximum Power Dissipation | 103 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 22 V |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 38 nC @ 18 V |
| Length | 16mm |
| Transistor Material | SiC |
| Width | 5mm |
| Number of Elements per Chip | 1 |
| Height | 21mm |