IXYS HiperFET Type N-Channel MOSFET, 66 A, 850 V Enhancement, 3-Pin TO-264 IXFK66N85X
- RS Stock No.:
- 146-4244
- Mfr. Part No.:
- IXFK66N85X
- Manufacturer:
- IXYS
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- RS Stock No.:
- 146-4244
- Mfr. Part No.:
- IXFK66N85X
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-264 | |
| Series | HiperFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 1.25kW | |
| Maximum Operating Temperature | 150°C | |
| Length | 20.3mm | |
| Width | 5.3 mm | |
| Standards/Approvals | No | |
| Height | 26.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-264 | ||
Series HiperFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 1.25kW | ||
Maximum Operating Temperature 150°C | ||
Length 20.3mm | ||
Width 5.3 mm | ||
Standards/Approvals No | ||
Height 26.3mm | ||
Automotive Standard No | ||
The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Related links
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- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 3-Pin PLUS264
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
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- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 3-Pin PLUS264 IXFB90N85X