IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268 IXFT60N65X2HV
- RS Stock No.:
- 146-4235
- Mfr. Part No.:
- IXFT60N65X2HV
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
SGD514.11
(exc. GST)
SGD560.37
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 04 January 2027
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | SGD17.137 | SGD514.11 |
| 120 - 270 | SGD16.321 | SGD489.63 |
| 300 - 570 | SGD15.58 | SGD467.40 |
| 600 - 870 | SGD14.087 | SGD422.61 |
| 900 + | SGD12.853 | SGD385.59 |
*price indicative
- RS Stock No.:
- 146-4235
- Mfr. Part No.:
- IXFT60N65X2HV
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-268 | |
| Series | HiperFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 780W | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Width | 15.15 mm | |
| Length | 16.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-268 | ||
Series HiperFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 780W | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Width 15.15 mm | ||
Length 16.05mm | ||
Automotive Standard No | ||
Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
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Higher efficiency
High power density
Easy to mount
Space savings
Related links
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