Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008CBKS,115
- RS Stock No.:
- 136-2144
- Mfr. Part No.:
- NX3008CBKS,115
- Manufacturer:
- Nexperia
Available for back order.
Added
Price Each (On a Reel of 3000)
SGD0.112
(exc. GST)
SGD0.122
(inc. GST)
| Units | Per unit | Per Reel* |
| 3000 - 3000 | SGD0.112 | SGD336.00 |
| 6000 - 6000 | SGD0.103 | SGD309.00 |
| 9000 + | SGD0.096 | SGD288.00 |
| *price indicative | ||
- RS Stock No.:
- 136-2144
- Mfr. Part No.:
- NX3008CBKS,115
- Manufacturer:
- Nexperia
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA)
Ultra small 1006 sized SOT883 (SC-101) leadless package
Broad choice of SMD and leaded package options
Wide range of double and single functions
More than 300 different products
Broad choice of SMD and leaded package options
Wide range of double and single functions
More than 300 different products
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Low threshold voltage
Very fast switching
Trench MOSFET technology
ESD protection up to 2
AEC-Q101 qualified
Very fast switching
Trench MOSFET technology
ESD protection up to 2
AEC-Q101 qualified
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 200 mA, 350 mA |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOT-363 (SC-88) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 2.8 Ω, 7.8 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.1V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 990 mW |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Width | 1.35mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 2 |
| Length | 2.2mm |
| Typical Gate Charge @ Vgs | 0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V |
| Automotive Standard | AEC-Q101 |
| Forward Diode Voltage | 1.2V |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |