Toshiba DTMOSIV Type N-Channel MOSFET, 13.7 A, 650 V Enhancement, 3-Pin TO-263 TK14G65W,RQ(S

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Subtotal (1 pack of 5 units)*

SGD17.96

(exc. GST)

SGD19.575

(inc. GST)

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In Stock
  • 5 unit(s) ready to ship from another location
  • Plus 855 unit(s) shipping from 04 June 2026
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Units
Per unit
Per Pack*
5 - 20SGD3.592SGD17.96
25 - 45SGD3.234SGD16.17
50 - 245SGD2.938SGD14.69
250 - 495SGD2.698SGD13.49
500 +SGD2.492SGD12.46

*price indicative

RS Stock No.:
133-2797
Mfr. Part No.:
TK14G65W,RQ(S
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13.7A

Maximum Drain Source Voltage Vds

650V

Series

DTMOSIV

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

130W

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

-1.7V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.46mm

Length

10.35mm

Automotive Standard

No

COO (Country of Origin):
JP

MOSFET Transistors, Toshiba


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