BS170 N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): GB
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 500 mA
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 5 Ω
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 0.8V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 830 mW
Transistor Material Si
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Width 4.19mm
Length 5.2mm
Maximum Operating Temperature +150 °C
Height 5.33mm
4000 In stock for delivery within 3 working days
Price Each (In a Bag of 1000)
SGD 0.151
(exc. GST)
SGD 0.162
(inc. GST)
units
Per unit
Per Bag*
1000 - 2000
SGD0.151
SGD151.00
3000 - 4000
SGD0.145
SGD145.00
5000 - 9000
SGD0.138
SGD138.00
10000 - 19000
SGD0.133
SGD133.00
20000 +
SGD0.128
SGD128.00
*price indicative
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