Vishay TrenchFET Dual N-Channel MOSFET, 125 A, 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5300DT-T1-UE3
- RS Stock No.:
- 736-656
- Mfr. Part No.:
- SIZF5300DT-T1-UE3
- Manufacturer:
- Vishay
N
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Subtotal (1 tape of 1 unit)*
SGD3.76
(exc. GST)
SGD4.10
(inc. GST)
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | SGD3.76 |
| 10 - 24 | SGD2.45 |
| 25 - 99 | SGD1.27 |
| 100 - 499 | SGD1.25 |
| 500 + | SGD1.22 |
*price indicative
- RS Stock No.:
- 736-656
- Mfr. Part No.:
- SIZF5300DT-T1-UE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Dual N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3FS | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.00351Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 56.8W | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Dual N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3FS | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.00351Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 56.8W | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay High performance Dual N-Channel MOSFET designed for efficient power management in various applications, delivering superior thermal performance and switching capabilities.
TrenchFET Gen V technology optimises efficiency and performance
Symmetric dual n-channel configuration enables versatile circuitry designs
High side and low side MOSFETs support 50% duty cycle applications
Extensive testing ensures reliable operation under rigorous conditions