STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2
- RS Stock No.:
- 719-652
- Mfr. Part No.:
- STH345N6F7-2
- Manufacturer:
- STMicroelectronics
N
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Units | Per unit |
|---|---|
| 1 - 9 | SGD6.62 |
| 10 - 24 | SGD5.84 |
| 25 - 99 | SGD5.24 |
| 100 - 499 | SGD4.51 |
| 500 + | SGD4.17 |
*price indicative
- RS Stock No.:
- 719-652
- Mfr. Part No.:
- STH345N6F7-2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 397A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | H2PAK-2 | |
| Series | STH | |
| Mount Type | Surface Mount | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Power Dissipation Pd | 341W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.7mm | |
| Width | 10.4 mm | |
| Length | 9.3mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 397A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type H2PAK-2 | ||
Series STH | ||
Mount Type Surface Mount | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Power Dissipation Pd 341W | ||
Maximum Operating Temperature 175°C | ||
Height 4.7mm | ||
Width 10.4 mm | ||
Length 9.3mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness