STMicroelectronics STS N channel-Channel Power MOSFET, 10 A, 30 V Enhancement, 8-Pin SO-8 STS10N3LH5
- RS Stock No.:
- 719-622
- Mfr. Part No.:
- STS10N3LH5
- Manufacturer:
- STMicroelectronics
N
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Units | Per unit |
|---|---|
| 1 - 24 | SGD0.69 |
| 25 - 99 | SGD0.62 |
| 100 - 499 | SGD0.56 |
| 500 - 999 | SGD0.47 |
| 1000 + | SGD0.43 |
*price indicative
- RS Stock No.:
- 719-622
- Mfr. Part No.:
- STS10N3LH5
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | STS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.021Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | ±22 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 4.6nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Length | 5mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series STS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.021Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs ±22 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 4.6nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Width 4 mm | ||
Length 5mm | ||
The STMicroelectronics STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses