Vishay SIR5607DP Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin PowerPAK SIR5607DP-T1-UE3

N

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Subtotal (1 reel of 3000 units)*

SGD7,455.00

(exc. GST)

SGD8,127.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 +SGD2.485SGD7,455.00

*price indicative

RS Stock No.:
653-195
Mfr. Part No.:
SIR5607DP-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

90.9A

Maximum Drain Source Voltage Vds

60V

Series

SIR5607DP

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.007Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

31.7nC

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Width

5.26 mm

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay P-channel MOSFET designed for efficient switching in Compact power systems. It supports up to 60 V drain-source voltage and is housed in a PowerPAK SO-8 package. Built using TrenchFET Gen V technology, it offers very low RDS(on), which minimizes voltage drop and conduction losses.

Pb Free

Halogen free

RoHS compliant

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