Nexperia BSH105 Type N-Channel MOSFET, 1.05 A, 20 V Enhancement, 3-Pin SOT-23 BSH105,215
- RS Stock No.:
- 509-273
- Mfr. Part No.:
- BSH105,215
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD7.80
(exc. GST)
SGD8.60
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 06 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD0.39 | SGD7.80 |
| 40 - 80 | SGD0.381 | SGD7.62 |
| 100 - 180 | SGD0.372 | SGD7.44 |
| 200 - 380 | SGD0.364 | SGD7.28 |
| 400 + | SGD0.356 | SGD7.12 |
*price indicative
- RS Stock No.:
- 509-273
- Mfr. Part No.:
- BSH105,215
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.05A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | BSH105 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 417mW | |
| Typical Gate Charge Qg @ Vgs | 3.9nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.05A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series BSH105 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 417mW | ||
Typical Gate Charge Qg @ Vgs 3.9nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1mm | ||
Automotive Standard No | ||
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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