ROHM RS1 Type P-Channel MOSFET, 43 A, 80 V Enhancement, 8-Pin HSOP-8 RS1N110ATTB1
- RS Stock No.:
- 265-472
- Mfr. Part No.:
- RS1N110ATTB1
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 10 units)*
SGD19.61
(exc. GST)
SGD21.37
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 110 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | SGD1.961 | SGD19.61 |
| 100 - 240 | SGD1.863 | SGD18.63 |
| 250 + | SGD1.725 | SGD17.25 |
*price indicative
- RS Stock No.:
- 265-472
- Mfr. Part No.:
- RS1N110ATTB1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | RS1 | |
| Package Type | HSOP-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21.0mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 135nC | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series RS1 | ||
Package Type HSOP-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21.0mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 135nC | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM Power MOSFET boasts low on resistance and is designed in a high power small mould package, making it ideal for switching applications and motor drives. Its compact size allows for efficient performance while optimizing space in electronic designs.
RoHS compliant
Low on resistance
Pb free plating
Halogen free
100 percent Rg and UIS tested
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