ROHM RV7 N-Channel MOSFET, 2 A, 60 V Enhancement, 3-Pin DFN1212-3 RV7L020GNTCR1
- RS Stock No.:
- 265-382
- Mfr. Part No.:
- RV7L020GNTCR1
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 25 units)*
SGD9.53
(exc. GST)
SGD10.38
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 100 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 75 | SGD0.381 | SGD9.53 |
| 100 - 225 | SGD0.361 | SGD9.03 |
| 250 - 475 | SGD0.335 | SGD8.38 |
| 500 - 975 | SGD0.308 | SGD7.70 |
| 1000 + | SGD0.297 | SGD7.43 |
*price indicative
- RS Stock No.:
- 265-382
- Mfr. Part No.:
- RV7L020GNTCR1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RV7 | |
| Package Type | DFN1212-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 157mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 1.1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.2mm | |
| Standards/Approvals | No | |
| Length | 1.2mm | |
| Height | 500μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RV7 | ||
Package Type DFN1212-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 157mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 1.1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.2mm | ||
Standards/Approvals No | ||
Length 1.2mm | ||
Height 500μm | ||
Automotive Standard No | ||
The ROHM MOSFET is designed for switching and load switching applications. Housed in a leadless ultra small SMD plastic package of 1.2x1.2x0.5 mm with an exposed drain pad, it offers excellent thermal conduction, ensuring efficient performance in compact electronic designs.
RoHS compliant
Low on resistance
Pb free lead plating
Related links
- ROHM RV7 N-Channel MOSFET 3-Pin DFN1212-3 RV7E040AJTCR1
- ROHM RV7C040BC Type P-Channel MOSFET -20 V Depletion, 4-Pin DFN1212-3 RV7C040BCTCR1
- ROHM BSS N-Channel MOSFET 3-Pin SST-3 BSS670AHZGT116
- ROHM RQ5 N-Channel MOSFET 3-Pin TSMT-3 RQ5L045BGTCL
- ROHM BSS N-Channel MOSFET 3-Pin SOT-323 BSS138WAHZGT106
- ROHM QH8KC5 N-Channel MOSFET 60 V Enhancement, 8-Pin TSMT-8 QH8KC5TCR
- Toshiba N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Toshiba N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 TK60S06K3L