STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4

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SGD34.42

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SGD37.52

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1 +SGD34.42

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Packaging Options:
RS Stock No.:
214-958
Mfr. Part No.:
SCT040W120G3-4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

Hip-247-4

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

56nC

Maximum Gate Source Voltage Vgs

-10 to 22 V

Forward Voltage Vf

1200V

Maximum Power Dissipation Pd

312W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Standards/Approvals

RoHS, ECOPACK2

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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