IXYS HiperFET, Polar Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin SOT-227 IXFN48N60P

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

SGD41.48

(exc. GST)

SGD45.21

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 9 unit(s) ready to ship from another location
  • Plus 193 unit(s) shipping from 04 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 4SGD41.48
5 +SGD40.23

*price indicative

Packaging Options:
RS Stock No.:
194-473
Distrelec Article No.:
302-53-375
Mfr. Part No.:
IXFN48N60P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

150nC

Maximum Power Dissipation Pd

625W

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

38.23mm

Standards/Approvals

No

Height

9.6mm

Automotive Standard

No

COO (Country of Origin):
KR

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy