IXYS Type N-Channel MOSFET, 36 A, 600 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 194-467P
- Mfr. Part No.:
- IXFH36N60P
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal 10 units (supplied in a tube)*
SGD159.50
(exc. GST)
SGD173.90
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 30 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 49 | SGD15.95 |
| 50 - 99 | SGD13.43 |
| 100 - 249 | SGD13.42 |
| 250 + | SGD11.39 |
*price indicative
- RS Stock No.:
- 194-467P
- Mfr. Part No.:
- IXFH36N60P
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 650W | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Height | 21.46mm | |
| Width | 5.3 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253323 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 650W | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Height 21.46mm | ||
Width 5.3 mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253323 | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 IXFH36N60P
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH36N50P
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 IXFH22N60P3
