N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXYS IXFP10N80P
- RS Stock No.:
- 194-057
- Mfr. Part No.:
- IXFP10N80P
- Manufacturer:
- IXYS
46 In stock for delivery within 4 working days
Added
Price Each
SGD9.07
(exc. GST)
SGD9.89
(inc. GST)
| Units | Per unit |
| 1 - 9 | SGD9.07 |
| 10 - 49 | SGD8.88 |
| 50 - 99 | SGD8.61 |
| 100 - 249 | SGD8.35 |
| 250 + | SGD8.09 |
- RS Stock No.:
- 194-057
- Mfr. Part No.:
- IXFP10N80P
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-220 |
| Series | HiperFET, Polar |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.1 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Length | 10.66mm |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 4.83mm |
| Transistor Material | Si |
| Height | 9.15mm |
| Minimum Operating Temperature | -55 °C |