STMicroelectronics STGAP2 Type N-Channel MOSFET, 4 A, 1700 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 152-180
- Mfr. Part No.:
- STGAP2SICSNC
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD15.93
(exc. GST)
SGD17.365
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 1,995 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD3.186 | SGD15.93 |
| 50 - 95 | SGD3.026 | SGD15.13 |
| 100 - 495 | SGD2.80 | SGD14.00 |
| 500 - 995 | SGD2.576 | SGD12.88 |
| 1000 + | SGD2.482 | SGD12.41 |
*price indicative
- RS Stock No.:
- 152-180
- Mfr. Part No.:
- STGAP2SICSNC
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Series | STGAP2 | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1GΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Width | 4 mm | |
| Length | 5mm | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Series STGAP2 | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1GΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Width 4 mm | ||
Length 5mm | ||
Height 1.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The STMicroelectronics single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and Interface circuitry. The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications.
Separate sink and source option for easy gate driving configuration
4 A Miller CLAMP dedicated pin option
UVLO function
Gate driving voltage up to 26 V
Related links
- STMicroelectronics STGAP2 Type N-Channel MOSFET 1700 V Enhancement, 8-Pin SO-8 STGAP2SICSNC
- STMicroelectronics Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- STMicroelectronics Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 STS7NF60L
- Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8