STMicroelectronics STGAP2 N-Channel MOSFET, 4 A, 1.7 kV Enhancement, 8-Pin SO-8 STGAP2SICSNC
- RS Stock No.:
- 152-180
- Mfr. Part No.:
- STGAP2SICSNC
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
SGD26.92
(exc. GST)
SGD29.35
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- 1,995 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD5.384 | SGD26.92 |
| 50 - 95 | SGD5.114 | SGD25.57 |
| 100 - 495 | SGD4.732 | SGD23.66 |
| 500 - 995 | SGD4.352 | SGD21.76 |
| 1000 + | SGD4.194 | SGD20.97 |
*price indicative
- RS Stock No.:
- 152-180
- Mfr. Part No.:
- STGAP2SICSNC
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 1.7kV | |
| Package Type | SO-8 | |
| Series | STGAP2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1GΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 5mm | |
| Height | 1.75mm | |
| Standards/Approvals | RoHS | |
| Width | 4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 1.7kV | ||
Package Type SO-8 | ||
Series STGAP2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1GΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 5mm | ||
Height 1.75mm | ||
Standards/Approvals RoHS | ||
Width 4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The STMicroelectronics single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and Interface circuitry. The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications.
Separate sink and source option for easy gate driving configuration
4 A Miller CLAMP dedicated pin option
UVLO function
Gate driving voltage up to 26 V
Related links
- STMicroelectronics STGAP2 N-Channel MOSFET 1.7 kV Enhancement, 8-Pin SO-8 STGAP2SICSNC
- STMicroelectronics SCT1000N170 N-Channel MOSFET 1.7 kV Enhancement, 3-Pin Hip-247 SCT1000N170
- Wolfspeed N-Channel MOSFET 1.7 kV Enhancement, 3-Pin TO-247 C2M0045170D
- onsemi EliteSiC N-Channel MOSFET 1.7 kV Enhancement, 4-Pin TO-247-4L NVH4L050N170M1
- Littelfuse LSIC1MO170T0750 N-Channel MOSFET 1.7 kV Enhancement, 7-Pin TO-263 LSIC1MO170T0750-TU
- Infineon IMBF1 N-Channel MOSFET 1.7 kV Enhancement, 7-Pin TO-263 IMBF170R1K0M1XTMA1
- Infineon IMBF1 N-Channel MOSFET 1.7 kV Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1
- Infineon IMW1 N-Channel MOSFET 1.7 kV Enhancement, 3-Pin TO-247 IMW120R045M1XKSA1
