STMicroelectronics MDmesh DM6 Type N-Channel MOSFET, 53 A, 650 V Enhancement, 8-Pin ACEPACK SMIT SH63N65DM6AG
- RS Stock No.:
- 152-113P
- Mfr. Part No.:
- SH63N65DM6AG
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
SGD467.00
(exc. GST)
SGD509.00
(inc. GST)
Add 10 units to get free delivery
Temporarily out of stock
- Shipping from 25 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 99 | SGD46.70 |
| 100 + | SGD43.06 |
*price indicative
- RS Stock No.:
- 152-113P
- Mfr. Part No.:
- SH63N65DM6AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ACEPACK SMIT | |
| Series | MDmesh DM6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 64mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.55V | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Power Dissipation Pd | 424W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AQG 324 | |
| Automotive Standard | AEC | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ACEPACK SMIT | ||
Series MDmesh DM6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 64mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.55V | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Power Dissipation Pd 424W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AQG 324 | ||
Automotive Standard AEC | ||
- COO (Country of Origin):
- CN
The STMicroelectronics device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very Compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.
AQG 324 qualified
Half-bridge power module
650 V blocking voltage
Fast recovery body diode
Very low switching energies
Low package inductance
