VSMA1085400 Vishay, 860nm High Power Infrared Emitting Diode, SMD SMD package

The Vishay high power infrared emitting diode has 850 nm centroid wavelength. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. It comes in high power SMD with lens package form. It has 3.4 x 3.4 x 2.45mm (L x W x H) dimensions.

Angle of half intensity ϕ = ± 40°
Low thermal resistance 6 K/W < RthJSP < 9 K/W
ESD up to 5 kV (according to ANSI / ESDA / JEDEC® JS-001)
Floor life 168 h, MSL 3, according to J-STD-020
Lead (Pb)-free reflow soldering

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