Infineon IKW25N120H3FKSA1, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 906-2892
- Mfr. Part No.:
- IKW25N120H3FKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD15.88
(exc. GST)
SGD17.30
(inc. GST)
Add 20 units to get free delivery
In Stock
- 4 unit(s) ready to ship from another location
- Plus 16 unit(s) shipping from 26 February 2026
- Plus 210 unit(s) shipping from 30 April 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 2 | SGD7.94 | SGD15.88 |
| 4 - 18 | SGD7.775 | SGD15.55 |
| 20 - 38 | SGD7.535 | SGD15.07 |
| 40 - 98 | SGD7.315 | SGD14.63 |
| 100 + | SGD7.095 | SGD14.19 |
*price indicative
- RS Stock No.:
- 906-2892
- Mfr. Part No.:
- IKW25N120H3FKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 326W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.7V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | RoHS, Pb-free lead plating, JEDEC | |
| Energy Rating | 4.3mJ | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 326W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.7V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals RoHS, Pb-free lead plating, JEDEC | ||
Energy Rating 4.3mJ | ||
Automotive Standard No | ||
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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